2SK4125 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0747B
2SK4125
N-Channel Power MOSFET
600V, 17A, 610mΩ, TO-3P-3L
http://onsemi.com
Features
• _{ON-resistance RDS(on)=0.47Ω (typ.)}
• _{Input capacitance Ciss=1200pF (typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
VDSS
VGSS
600
V
±30
V
Drain Current (DC)
ID
17
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
52
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*1
2.5
W
170
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *2
EAS
Avalanche Current *3
IAV
78.8 mJ
17
A
*1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=17A (Fig.1)
*3 L≤500μH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
2SK4125-1E
15.6
4.8
1.5
3.2
7.0
2.0
3.0
1.0
123
5.45
5.45
13.6
0.6
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
K4125
LOT No.
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701 No. A0747-1/7