2SK4124 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0746C
2SK4124
N-Channel Power MOSFET
500V, 20A, 430mΩ, TO-3P-3L
http://onsemi.com
Features
• _{Low ON-resistance, low input capacitance, ultrahigh-speed switching}
• _{Adoption of high reliability HVP process}
• _{Avalanche resistance guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
VDSS
VGSS
500
V
±30
V
Drain Current (DC)
ID
20
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
60
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*1
2.5
W
170
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
110 mJ
20
A
*1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=20A (Fig.1)
*3 L≤500μH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
2SK4124-1E
15.6
4.8
1.5
3.2
7.0
2.0
3.0
1.0
123
5.45
5.45
13.6
0.6
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
K4124
LOT No.
2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7