2SK4101LS Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

2SK4101LS
Ordering number : ENA0745A
2SK4101LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• _{High reliability (Adoption of HVP process).}
• _{Attachment workability is good by Mica-less package.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10µs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
650
V
±30
V
7
A
6.4
A
28
A
2.0
W
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
Avalanche Current *5
IAV
*1 Shows chip capability
289
mJ
7
A
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=10mH, IAV=7A
*5 L≤10mH, single pulse
Marking : K4101
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK4101LS/D