2SK4099LS Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0777C
2SK4099LS
N-Channel Power MOSFET
600V, 8.5A, 0.94Ω, TO-220F-3FS
http://onsemi.com
Features
• _{ON-resistance RDS(on)=0.72Ω (typ.)}
• _{10V drive}
• _{Input capacitance Ciss=750pF}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
600
V
±30
V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
8.5
A
6.9
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
34
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*3
2.0
W
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
197 mJ
Avalanche Current *5
IAV
8.5
A
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=8.5A (Fig.1)
*5 L≤5mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54 ^2SK4099LS-1E
Ordering & Package Information
Device
Package
Shipping
2SK4099LS-1E
TO-220F-3FS,
SC-67
50pcs./tube
memo
Pb-Free
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
K4099
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
May, 2013
51513 TKIM TC-00002922/O2407 TIIM TC-00000935/60607QB TIIM TC-00000728 No. A0777-1/7