2SK4094 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0523B
2SK4094
N-Channel Power MOSFET
60V, 100A, 5mΩ, TO-220-3L
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=3.8mΩ (typ.)}
• _{Input capacitance Ciss=12500pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
60
V
±20
V
100
A
400
A
1.75
W
90
W
150
°C
--55 to +150
°C
850 mJ
70
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7536-001
10.0
3.6
4.5
1.3
2SK4094-1E
Product & Package Information
• Package
: TO-220-3L
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
(0.6)
8.9 MAX
1.52
1.27
0.8
123
2.54
2.54
0.5
1 : Gate
2 : Drain
3 : Source
TO-220-3L
K4094
LOT No.
2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/7