2SK4088LS Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0556D
2SK4088LS
N-Channel Power MOSFET
650V, 11A, 0.85Ω, TO-220F-3FS
http://onsemi.com
Features
• _{ON-resistance RDS(on)=0.65Ω (typ.)}
• _{10V drive}
• _{Input capacitance Ciss=1000pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
650
V
±30
V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
11
A
7.5
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*3
2.0
W
37
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
65 mJ
Avalanche Current *5
IAV
11
A
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=11A (Fig.1)
*5 L≤1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54 ^2SK4088LS-1E
Ordering & Package Information
Device
Package
Shipping
2SK4088LS-1E
TO-220F-3FS,
SC-67
50pcs./tube
memo
Pb-Free
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
K4088
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
May, 2013
51513 TKIM TC-00002921/O1007 TIIM TC-00000931/40407QB TIIM TC-00000631/ No. A0556-1/7
22107QB TIIM TC-00000372