2SK4085LS Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0553E
2SK4085LS
N-Channel Power MOSFET
500V, 16A, 430mΩ, TO-220F-3FS
http://onsemi.com
Features
• _{ON-resistance RDS(on)=0.33Ω (typ.)}
• _{Input capacitance Ciss=1200pF (typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VGSS
IDc *1
IDpack *2
IDP
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
±30
V
16
A
11
A
60
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*3
2.0
W
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
141 mJ
Avalanche Current *5
IAV
16
A
*1 Shows chip capability.
*2 Package limited.
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=16A (Fig.1)
*5 L≤1mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
2SK4085LS-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
K4085
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/40412 TC-00002743/O1007 TIIM TC-00000927/ No. A0553-1/7
40407QB TIIM TC-00000628/22107QB TIIM TC-00000556