2SK4065 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0324A
2SK4065
N-Channel Power MOSFET
75V, 100A, 6mΩ, TO-263-2L
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=4.6mΩ (typ.)}
• _{4V drive}
• _{Input capacitance Ciss=12200pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
75
V
±20
V
100
A
400
A
1.65
W
90
W
150
°C
--55 to +150
°C
735 mJ
70
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0
4
1 23
1.27
0.8
2.54
2.54
4.5
1.3
0.254
2SK4065-DL-1E
8.0
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
K4065
LOT No.
DL
Electrical Connection
2, 4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002767/41006QA MSIM TB-00002239 No. A0324-1/7