2SK4065-DL-E Datasheet, PDF (1/7 Pages) ON Semiconductor – General-Purpose Switching Device Applications

Ordering number : ENA0324A
2SK4065
SANYO Semiconductors
DATA SHEET
2SK4065
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=4.6mΩ (typ.)}
• _{4V drive}
• _{Input capacitance Ciss=12200pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
75
V
±20
V
100
A
400
A
1.65
W
90
W
150
°C
--55 to +150
°C
735 mJ
70
A
Package Dimensions
unit : mm (typ)
7535-001
10.0
4.5
1.3
4
2SK4065-DL-1E
8.0
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
K4065
1 23
1.27
0.8
2.54
2.54
5.3
0.254
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
DL
Electrical Connection
2, 4
1
LOT No.
SANYO : TO-263-2L
3
http://semicon.sanyo.com/en/network
53012 TKIM TC-00002767/41006QA MSIM TB-00002239 No. A0324-1/7