2SK3826 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

2SK3826
Ordering number : ENN8243
2SK3826
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• _{4V drive.}
• _{Ultrahigh-speed switching.}
• _{Motor drive, DC / DC converter.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=200µH, IAV=26A
*2 L≤200µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3826
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=13A
ID=13A, VGS=10V
ID=13A, VGS=4V
Ratings
Unit
100
V
±20
V
26
A
104
A
1.75
W
45
W
150
°C
--55 to +150
°C
80
mJ
26
A
min
100
1.2
11
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.6
V
19
S
46
60 mΩ
57
80 mΩ
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3826/D