2SK3820 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : EN8147A
2SK3820
N-Channel Power MOSFET
100V, 26A, 60mΩ, TO-263-2L
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=45mΩ(typ.)}
• _{Input capacitance Ciss=2150pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=20V, L=200μH, IAV=26A (Fig.1)
*2 L≤200μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
100
V
±20
V
26
A
104
A
1.65
W
50
W
150
°C
--55 to +150
°C
84.5 mJ
26
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0
4
1 23
1.27
0.8
2.54
2.54
4.5
1.3
0.254
2SK3820-DL-1E
8.0
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
Ordering & Package Information
Device
Package
Shipping
2SK3820-DL-1E
TO-263-2L
(SC-83, TO-263)
800pcs./reel
memo
Pb Free
Packing Type: DL
DL
Marking
K3820
LOT No.
Electrical Connection
2, 4
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6