2SK3818 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

2SK3818
Ordering number : ENN8056
2SK3818
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• _{Ultrahigh-speed switching.}
• _{4V drive.}
• _{Motor drive, DC / DC converter.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=100µH, IAV=74A
*2 L≤100µH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3818
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=37A
ID=37A, VGS=10V
ID=37A, VGS=4V
Ratings
Unit
60
V
±20
V
74
A
296
A
1.65
W
75
W
150
°C
--55 to +150
°C
410
mJ
74
A
min
60
1.2
27
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.6
V
45
S
10
13 mΩ
13
18 mΩ
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3818/D