2SK3747 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage, High-Speed Switching Applications

Ordering number : EN7767B
2SK3747
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-3PF-3L
http://onsemi.com
Features
• _{Low ON-resistance, low input capacitance, ultrahigh-speed switching}
• _{High reliability (Adoption of HVP process)}
• _{Attachment workability is good by Mica-less package}
• _{Avalanche resistance guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
1500
V
±35
V
2
A
4
A
3.0
W
50
W
150
°C
--55 to +150
°C
41 mJ
2
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7538A-002
15.5
3.6
5.5
2SK3747-1E
3.0
Product & Package Information
• Package
: TO-3PF-3L
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
2.0
2.0
4.0
0.75
123
5.45
5.45
2.0
0.9
1 : Gate
2 : Drain
3 : Source
TO-3PF-3L
K3747
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018 No.7767-1/7