2SK3666 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

Ordering number : EN8158C
2SK3666
N-Channel JFET
30V, 0.6 to 3.0mA, 6.5mS, CP
http://onsemi.com
Applications
• _{Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications}
Features
• _{Small IGSS}
• _{Small Ciss}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
30
V
--30
V
10 mA
10 mA
200 mW
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7013A-011
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.1
2SK3666-2-TB-E
3
2SK3666-3-TB-E
Packing Type: TL Marking
1
0.95
2
0.4
1 : Source
2 : Drain
3 : Gate
CP
JK
TB
Electrical Connection
3
12
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40414HK TC-00003105/62012TKIM/D2805IMMS/31505TSIM GB No.8158-1/4