2SJ665 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : EN8590A
2SJ665
P-Channel Power MOSFET
–100V, –27A, _{77mΩ, TO-263-2L}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=59mΩ(typ.)}
• _{4V drive}
• _{Input capacitance Ciss=4200pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1)
*2 L≤100μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--100
V
±20
V
--27
A
--108
A
65
W
150
°C
--55 to +150
°C
48 mJ
--27
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0
4
1 23
1.27
0.8
2.54
2.54
4.5
1.3
0.254
2SJ665-DL-1E
8.0
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
J665
LOT No.
DL
Electrical Connection
2, 4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM TC-00002779/N1805QA MSIM TB-00001098 No.8590-1/7