2SJ652 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN7625A
2SJ652
P-Channel Power MOSFET
–60V, –28A, _{38mΩ, TO-220F-3SG}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=28.5mΩ(typ.)}
• _{Input capacitance Ciss=4360pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=500μH, IAV=--28A (Fig.1)
*2 L≤500μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--28
A
--112
A
2.0
W
30
W
150
°C
--55 to +150
°C
343 mJ
--28
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
2SJ652-1E
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
A
1.47 MAX
0.8
123
2.54
2.54
2.76
DETAIL-A
(0.84)
0.5
1 : Gate
FRAME _{2 : Drain}
EMC
3 : Source
TO-220F-3SG
J652
1
LOT No.
3
Semiconductor Components Industries, LLC, 2013
July, 2013
51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7