2SC5551A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – High-Frequency Medium-Output Amplifier Applications

Ordering number : ENA1118A
2SC5551A
RF Transistor
30V, 300mA, fT=3.5GHz, NPN Single PCP
http://onsemi.com
Features
• _{High fT : (fT=3.5GHz typ)}
• _{Large current : (IC=300mA)}
• _{Large allowable collector dissipation (1.3W max)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
40
V
30
V
2
V
300 mA
600 mA
1.3
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC5551AE-TD-E
2SC5551AF-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013
August, 2013
TD
RANK
Electrical Connection
2
1
3
80812 TKIM/D0209AB TKIM TC-00002042 No. A1118-1/6