2SC5501A Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – VHF to UHF Wide-Band Low-Noise Amplifier Applications

Ordering number : ENA1061A
2SC5501A
RF Transistor
10V, 70mA, fT=7GHz, NPN Single MCP4
http://onsemi.com
Features
• _Low-noise
: NF=1.0dB typ (f=1GHz)
• _{High gain}
: ⏐S21e⏐²=13dB typ (f=1GHz)
• _{High cut-off frequency : fT=7GHz typ}
• _{Large allowable collector dissipation : PC=500mW max}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
10
V
2
V
70 mA
500 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7025A-001
2.0
1.3
0.3 0.15
43
2SC5501A-4-TR-E
0 to 0.08
Product & Package Information
• Package
: MCP4
• JEITA, JEDEC
: SC-82, SC-82AB, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TR
Marking
LOT No.
LN
TR
LOT No.
1
2
0.6
1.15
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
MCP4
Electrical Connection
2
4
1, 3
Semiconductor Components Industries, LLC, 2013
August, 2013
N0712 TKIM/60408AB TIIM TC-00001434 No. A1061-1/8