2SC5501A-4-TR-E Datasheet, PDF (1/5 Pages) ON Semiconductor – VHF to UHF Wide-Band Low-Noise Amplifier Applications

Ordering number : ENA1061
2SC5501A
SANYO Semiconductors
DATA SHEET
2SC5501A
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Features
• _Low-noise
: NF=1.0dB typ (f=1GHz).
• _{High gain}
: ⏐S21e⏐²=13dB typ (f=1GHz).
• _{High cut-off frequency : fT=7GHz typ.}
• _{Large allowable collector dissipation : PC=500mW max.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²âœ•0.8mm)
Ratings
Unit
20
V
10
V
2
V
70 mA
500 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
* : The 2SC5501A is classified by 20mA hFE as follows :
Marking
LN4
LN5
Rank
4
5
hFE
90 to 180
135 to 270
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
min
90*
Ratings
Unit
typ
max
1.0
μA
10
μA
270*
Continued on next page.
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60408AB TI IM TC-00001434 No. A1061-1/5