2SC5415A Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifier Applications

Ordering number : ENA1080A
2SC5415A
RF Transistor
12V, 100mA, fT=6.7GHz, NPN Single PCP
http://onsemi.com
Features
• _{High gain}
: ⏐S21e⏐²=9dB typ (f=1GHz)
• _{High cut-off frequency : fT=6.7GHz typ}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
12
V
2
V
100 mA
800 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC5415AE-TD-E
2SC5415AF-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
RANK
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
August, 2013
90512 TKIM/93009AB TKIM TC-00002100 No. A1080-1/8