2SC4399 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Frequency General-Purpose Amp Applications

Ordering number : ENN3020
2SC4399
NPN Epitaxial Planar Silicon Transistors
High-Frequency General-Purpose
Amplifier Applications
Features
· High power gain : PG=25dB typ (f=100MHz).
· Ultrasmall-sized package permitting the 2SC4399-
applied sets to be made small and slim.
Package Dimensions
unit:mm
2059B
[2SC4399]
0.3
0.15
3
0 to 0.1
1
2
0.65 0.65
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse transfer Capacitance
Base-to-Collector Time Constant
Power Gain
Noise Figure
ICBO
IEBO
hFE
fT
Cre
rbb'Cc
PG
NF
VCB=10V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, f=1MHz
VCB=6V, IC=1mA, f=31.9MHz
VCB=6V, IC=1mA, f=100MHz
VCB=6V, IC=1mA, f=100MHz
* : The 2SC4399 is classified by 1mA h_FE as follows :
Marking : F
h_FE rank : 3, 4, 5
Rank
hFE
3
60 to 120
4
90 to 180
5
135 to 270
0.3
0.6
0.9
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
Unit
30 V
20 V
5V
30 mA
150 mW
150 ˚C
–55 to +150 ˚C
Ratings
min
typ
60*
200 320
0.9
12
25
3.0
max
0.1
0.1
270*
1.2
20
Unit
μA
μA
MHz
pF
ps
dB
dB
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SC4399/D