2SC3332R Datasheet, PDF (1/5 Pages) ON Semiconductor – Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP

Ordering number : EN1334F
2SC3332
Bipolar Transistor
160V, 0.7A, Low VCE(sat) NPN Single NP
http://onsemi.com
Features
• _{Hgih breakdown voltage}
• _{Excellent hFE linearity}
• _{Wide SOA and highly resistant to breakdown}
• _{Adoption of MBIT process}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
180
V
160
V
6
V
0.7
A
1.5
A
700 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
4.0
2SC3332S
2SC3332T
2SC3332S-AA
2SC3332T-AA
Product & Package Information
• Package
: NP
• JEITA, JEDEC
: SC-34A, TO-92, TO-226AA, SOT-54
• Minimum Packing Quantity : 1,500 pcs./box, 500pcs./bag
Marking
Electrical Connection
2
0.45
0.5
3
1
0.45
123
1.3
1.3
0.44
1 : Emitter
2 : Collector
3 : Base
NP
Semiconductor Components Industries, LLC, 2013
December, 2013
D1813 TKIM TC-00003081/91912 TKIM/83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/5