2SB826 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,50V,40W)

2SB826 / 2SD1062
Ordering number : EN723I
2SB826 / 2SD1062 ^{PNP / NPN Epitaxial Planar Silicon Transistors}
50V / 12A Switching Applications
Applications
• _{Relay drivers, high-speed inverters, converters, and other general high-current switching applications.}
Features
• Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
• Wide ASO leading to high resistance to breakdown.
Specifications ( ) : 2SB826
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Ratings
Unit
(--)60
V
(--)50
V
(--)6
V
(--)12
A
(--)15
A
1.75
W
40
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
(--)0.1 mA
(--)0.1 mA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SB826_2SD1062/D