2SB817C Datasheet, PDF (1/4 Pages) ON Semiconductor – Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, _{Low VCE(sat) PNP TO-3P-3L}
http://onsemi.com
Features
• _{Large current capacitance}
• _{Wide SOA and high durability against breakdown}
• _{Adoption of MBIT process}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Conditions
Ratings
Unit
-160
V
-140
V
--6
V
--12
A
--20
A
2.5
W
120
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-001
15.6
4.8
1.5
2SB817C-1E
3.2
7.0
13.6
Product & Package Information
• Package
: TO-3P-3L
• JEITA, JEDEC
: SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./tube
Marking
B817C
LOT No.
Electrical Connection
2
1
2.0
3
3.0
1.0
0.6
123
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
January, 2014
12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.A0188-1/4