2SB1216 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Current Switching Applications

2SB1216, 2SD1816
Bipolar Transistor
(−)100V, (−)4A, Low VCE(sat),
(PNP)NPN Single
www.onsemi.com
Features
• Low Collector to Emitter Saturation Voltage
• Small and Slim Package Facilitating Compactness of Sets
• High fT
• Good Linearity of hFE
• Fast Switching Time
Typical Applications
• Suitable for Relay Drivers
• High Speed Inverters
• Converters
• Other General High Current Switching Applications
ELECTRICAL CONNECTION
2,4
2,4
1
3
2SB1216
1
3
2SD1816
MARKING
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SPECIFICATIONS ( ) : 2SB1216
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
(−) 120
V
Collector to Emitter Voltage
VCEO
(−) 100
V
Emitter to Base Voltage
VEBO
(−) 6
V
Collector Current
IC
(−) 4
A
Collector Current (Pulse)
ICP
(−) 8
A
Collector Dissipation
Tc=25°C
PC
1
W
20
W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
B1216
D1816
RANK
LOT No.
RANK
LOT No.
4
1
2
IPAK / TP
3
4
2
1
3
DPAK / TP-FA
ORDERING INFORMATION
See detailed ordering and shipping
information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
March 2016 - Rev. 2
Publication Order Number :
2SB1216_2SD1816/D