2SA2210 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Ordering number : ENA0667B
2SA2210
Bipolar Transistor
–50V, –20A, _{Low VCE(sat) PNP TO-220F-3SG}
http://onsemi.com
Applications
• _{Relay drivers, lamp drivers, motor drivers.}
Features
• _{Adoption of MBIT processes}
• _{Low collector-to-emitter saturation voltage}
• _{Large current capacitance}
• _{High-speed switching}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Conditions
Ratings
Unit
--50
V
--50
V
--6
V
--20
A
--25
A
--3
A
2
W
30
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7529-002
10.16
3.18
4.7
2.54
2SA2210-1E
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity
: 50 pcs./magazine
Marking Electrical Connection
2
A
1.47 MAX
0.8
2.76
DETAIL-A
(0.84)
A2210
LOT No.
1
3
123
0.5
2.54
2.54
FRAME
EMC
1 : Base
2 : Collector
3 : Emitter
TO-220F-3SG
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM/21512 TKIM TC-00002708/30707FA TI IM TC-00000565 No. A0667-1/7