2SA2186 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Ordering number : ENA0269A
2SA2186
Bipolar Transistor
-50V, -2A, Low VCE(sat), PNP Single NMP
http://onsemi.com
Applicaitons
• _{Voltage regulators, relay drivers, lamp drivers, electrical equipment}
Features
• _{Adoption of MBIT processes}
• _{Low collector-to-emitter saturation voltage}
• _{Large current capacity}
• _{High-speed switching}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
--50
V
--50
V
--6
V
--2
A
--4
A
--400 mA
0.9
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05 ^2SA2186-AN
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping))
A2186
Electrical Connection
2
0.6
0.5
0.9
LOT No.
3
1
1
2
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 ^{3 : Base}
NMP(Taping)
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM TC-00002807/D2805EA MSIM TB-00001911 No. A0269-1/7