2SA2153_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Bipolar Transistor

2SA2153
Bipolar Transistor
−50V, −2A, Low VCE(sat), PNP Single
Features
• Adoption of MBIT Process
• Low Saturation Voltage
• Large Current Capacity and Wide ASO
Typical Applications
• Voltage Regulators
• Relay Drivers
• Lamp Drivers
• Electrical Equipment
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
−50
V
Collector to Emitter Voltage
VCEO
−50
V
Emitter to Base Voltage
VEBO
−6
V
Collector Current
IC
−2
A
Collector Current (Pulse)
ICP
−4
A
Base Current
Collector Dissipation
IB
(Note 2)
Tc=25°C
PC
−400 mA
1.3
W
3.5
W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(450mm² × 0.8mm)
www.onsemi.com
ELECTRICAL CONNECTION
2
1 : Base
1
2 : Collector
3 : Emitter
3
MARKING
12
3
SOT-89 / PCP-1
123
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 2
Publication Order Number :
2SA2153/D