2SA2112 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High Current Switching Applications

Ordering number : EN7379A
2SA2112
Bipolar Transistor
-50V, -3A, Low VCE(sat), PNP Single NMP
http://onsemi.com
Applicaitons
• _{DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes}
Features
• _{Adoption of MBIT process}
• _{Low collector-to-emitter saturation voltage}
• _{Large current capacity}
• _{High-speed switching}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
--50
V
--50
V
--50
V
--6
V
--3
A
--6
A
--600 mA
1
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05 ^2SA2112-AN
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping)) Electrical Connection
0.6
0.5
0.9
A2112
LOT No.
2
3
1
1
2
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 ^{3 : Base}
NMP(Taping)
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM TC-00002806/N2503 TSIM TA-3749 No.7379-1/7