2SA2012-TD-E Datasheet, PDF (1/5 Pages) ON Semiconductor – Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP

Ordering number : EN6306B
2SA2012
Bipolar Transistor
–30V, –5A, _{Low VCE(sat) PNP Single PCP}
http://onsemi.com
Applicaitons
• _{Relay drivers, lamp drivers, motor drivers, flash}
Features
• _{Adoption of MBIT processes}
• _{Large current capacity}
• _{Low collector to emitter saturation voltage}
• _{Ultrasmall-sized package permitting applied sets to be made small and slim}
• _{High allowable power dissipation}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
--30
V
--30
V
--5
V
--5
A
--8
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA2012-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
TD
Electrical Connection
2
1
3
D0413 TKIM TC-00003071/40710EA TKIM/21400TS (KOTO) TA-2520 No.6306-1/5