2SA1699 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

Ordering number : ENN2973
2SA1699 ^{PNP Epitaxial Planar Silicon Transistors}
High-Voltage Driver Applications
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent h_FE linearity.
Package Dimensions
unit:mm
2003B
[2SA1699]
5.0
4.0
4.0
0.45
0.5
0.45
0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
123
JEDEC : TO-92 1 : Emitter
1.3
1.3 EIAJ : SC-43
2 : Collector
SANYO : NP 3 : Base
Conditions
Ratings
Unit
–400 V
–400 V
–5 V
–200 mA
–400 mA
600 mW
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain-Bandwidth Product
fT
* : The 2SA1699 is classified by 50mA h_FE as follows :
Rank
hFE
D
E
60 to 120 100 to 200
VCB=–300V, IE=0
VEB=–4V, IC=0
VCE=–10V, IC=–50mA
VCE=–30V, IC=–10mA
Ratings
Unit
min
typ
max
–0.1 μA
–0.1 μA
60*
200*
70
MHz
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SA1699/D