2SA1419S-TD-E Datasheet, PDF (1/7 Pages) ON Semiconductor – High-Voltage Switching Applications

Ordering number : EN2007C
2SA1419 / 2SC3649
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistor
2SA1419/2SC3649 High-Voltage Switching
Applications
Features
• _{Adoption of FBET, MBIT processes}
• _{High breakdown voltage and large current capacity}
• _{Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s}
Specifications ^{( ) : 2SA1419}
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
(--)180
V
(--)160
V
(--)6
V
(--)1.5
A
(--)2.5
A
500 mW
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1
2
3
0.4
0.5
1.5
3.0
2SA1419S-TD-E
2SA1419S-TD-H
1.5 _{2SA1419T-TD-E}
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
0.4
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
TD
Marking
RANK
RANK
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2SA1419
2SC3649
Electrical Connection
2
2
1
1
3
2SA1419
3
2SC3649
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82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7