2SA1415 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Voltage Switching, Predriver Applications

2SA1415 / 2SC3645
Ordering number : EN1720B
2SA1415 / 2SC3645
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching,
Predriver Applications
Features
• _{Adoption of FBET process.}
• _{High breakdown voltage (VCEO=160V).}
• _{Excellent linearity of hFE and small Cob.}
• _{Fast switching speed.}
• Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.
Specifications ( ) : 2SA1415
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : 2SA1415 : AA, 2SC3645: CA
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Moutned on ceramic board (250mm²âœ•0.8mm)
Ratings
Unit
(--)180
V
(--)160
V
(--)5
V
(--)140 mA
(--)200 mA
500 mW
1.3
W
150
°C
--55 to +150
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
2SA1415_2SC3645/D