2SA1162GT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Amplifier Transistors

2SA1162GT1, 2SA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
• Moisture Sensitivity Level: 1
• ESD Rating: TBD
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector−Base Voltage
V_(BR)CBO
Collector−Emitter Voltage
V_(BR)CEO
Emitter−Base Voltage
V_(BR)EBO
Collector Current − Continuous
I_C
Collector Current − Peak
I_C(P)
Base Current
I_B
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
P_D
Junction Temperature
T_J
Storage Temperature
T_stg
Value
50
50
7.0
150
200
30
Max
200
150
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Unit
mW
°C
°C
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
SAx M
SA = Specific Device Code
x = G or Y
M = Date Code
ORDERING INFORMATION
Device†
Package
Shipping^†
2SA1162GT1
SC−59
3000/Tape & Reel
2SA1162YT1
SC−59
3000/Tape & Reel
†The “T1” suffix refers to a 7 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 0
Publication Order Number:
2SA1162GT1/D