2SA1020 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020
Preferred Device
One Watt High Current
PNP Transistor
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_CE
50
Vdc
V_CB
50
Vdc
V_EB
5.0
Vdc
I_C
2.0
Adc
P_D
900
mW
5.0 mW/°C
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
P_D
1.5
W
12 mW/°C
Operating and Storage Junction Temperature T_J, T_stg −55 to
°C
Range
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R_qJA
125 °C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
PNP
1
EMITTER
1
23
TO−92 (TO−226)
CASE 29−10
STYLE 14
MARKING DIAGRAM
2SA
1020
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2SA1020/D