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2N7002E Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
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2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, NâChannel, SOTâ23
Features
⢠Low RDS(on)
⢠Small Footprint Surface Mount Package
⢠Trench Technology
⢠This is a PbâFree Device
Applications
⢠Low Side Load Switch
⢠Level Shift Circuits
⢠DCâDC Converter
⢠Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Drain Current (Note 1)
Steady State
VDSS
60
V
VGS
±20
V
ID
TA = 25°C
TA = 85°C
mA
260
190
t<5s
Power Dissipation (Note 1)
Steady State
t<5s
TA = 25°C
TA = 85°C
PD
310
220
mW
300
420
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage
Temperature Range
IDM
1.2
A
TJ, TSTG â55 to
°C
+150
Source Current (Body Diode)
IS
Lead Temperature for Soldering Purposes
TL
(1/8â³ from case for 10 s)
300
mA
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
JunctionâtoâAmbient â Steady State
(Note 1)
Symbol
RqJA
Max
417
Unit
°C/W
JunctionâtoâAmbient â t ⤠5 s (Note 1)
RqJA
300
1. Surfaceâmounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 W @ 4.5 V
2.5 W @ 10 V
ID MAX
(Note 1)
310 mA
Simplified Schematic
NâChannel
3
1
2
(Top View)
3
1
2
SOTâ23
CASE 318
STYLE 21
703
W
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
703 W
1
Gate
= Device Code
= Work Week
2
Source
ORDERING INFORMATION
Device
2N7002ET1G
Package
SOTâ23
(PbâFree)
Shippingâ
3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
April, 2007 â Rev. 1
Publication Order Number:
2N7002E/D
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