2N7000 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Drain Current
– Continuous
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Symbol
R_θJA
TL
Value
60
60
±ā20
±ā40
200
500
350
2.8
–55 to
+150
Max
357
300
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
http://onsemi.com
200 mAMPS
60 VOLTS
RDS(on) = 5 Ω
N–Channel
D
G
S
TO–92
CASE 29
Style 22
123
MARKING DIAGRAM
& PIN ASSIGNMENT
2N7000
YWW
1
Source
3
Drain
2
Gate
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 5
Publication Order Number:
2N7000/D