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2N6667_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – Darlington Silicon Power Transistors | |||
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2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for generalâpurpose amplifier and low speed switching
applications.
⢠High DC Current Gain â
hFE = 3500 (Typ) @ IC = 4.0 Adc
⢠CollectorâEmitter Sustaining Voltage â @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) â 2N6667
= 80 Vdc (Min) â 2N6668
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
⢠Monolithic Construction with BuiltâIn BaseâEmitter Shunt Resistors
⢠TOâ220AB Compact Package
⢠Complementary to 2N6387, 2N6388
⢠These Devices are PbâFree and are RoHS Compliant*
COLLECTOR
BASE
â 8 k â 120
EMITTER
Figure 1. Darlington Schematic
www.onsemi.com
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60â80 V, 65 W
4
1
2
3
TOâ220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N666x
AYWWG
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = PbâFree Package
ORDERING INFORMATION
Device
2N6667G
Package
TOâ220
(PbâFree)
Shipping
50 Units/Rail
2N6668G
TOâ220
(PbâFree)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 â Rev. 8
Publication Order Number:
2N6667/D
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