2N6667_07 Datasheet, PDF (1/6 Pages) ON Semiconductor – Darlington Silicon Power Transistors

2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general-purpose amplifier and low speed switching
applications.
•ăHigh DC Current Gain -
h_FE = 3500 (Typ) @ I_C = 4.0 Adc
•ăCollector-Emitter Sustaining Voltage - @ 200 mAdc
V_CEO(sus) = 60 Vdc (Min) - 2N6667
= 80 Vdc (Min) - 2N6668
•ăLow Collector-Emitter Saturation Voltage -
V_CE(sat) = 2.0 Vdc (Max)@ I_C = 5.0 Adc
•ăMonolithic Construction with Built-In Base-Emitter Shunt Resistors
•ăTO-220AB Compact Package
•ăComplementary to 2N6387, 2N6388
•ăPb-Free Packages are Available*
http://onsemi.com
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60-80 V, 65 W
MARKING
DIAGRAM
4
COLLECTOR
BASE
≈ 8 k ≈ 120
EMITTER
Figure 1. Darlington Schematic
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A-09
TO-220AB
2N666x
AYWWG
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N6667
TO-220AB
50 Units/Rail
2N6667G
TO-220AB
(Pb-Free)
50 Units/Rail
2N6668
TO-220AB
50 Units/Rail
2N6668G
TO-220AB
(Pb-Free)
50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 6
Publication Order Number:
2N6667/D