2N6667 Datasheet, PDF (1/8 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTORS(PNP SILICON )

ON Semiconductor⁾
Darlington Silicon
Power Transistors
. . . designed for general–purpose amplifier and low speed
switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 4 Adc
• Collector–Emitter Sustaining Voltage — @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6667
= 80 Vdc (Min) — 2N6668
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
• Complementary to 2N6387, 2N6388
COLLECTOR
BASE
[ 8 k [ 120
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
60–80 VOLTS
65 WATTS
4
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
EMITTER
Figure 1. Darlington Schematic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(1) Indicates JEDEC Registered Data.}
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
2N6667
2N6668
60
80
60
80
5
10
15
250
65
0.52
2
0.016
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
watts
W/_C
Watts
W/_C
_C
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 4
Publication Order Number:
2N6667/D