2N6517G Datasheet, PDF (1/7 Pages) ON Semiconductor – High Voltage Transistors

NPN − 2N6515, 2N6517;
PNP − 2N6520
High Voltage Transistors
NPN and PNP
Features
• Voltage and Current are Negative for PNP Transistors
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
V_CEO
Vdc
2N6515
250
2N6517, 2N6520
350
Collector − Base Voltage
V_CBO
Vdc
2N6515
250
2N6517, 2N6520
350
Emitter − Base Voltage
V_EBO
Vdc
2N6515, 2N6517
6.0
2N6520
5.0
Base Current
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
I_B
250
mAdc
I_C
500
mAdc
P_D
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
NPN
1
EMITTER
COLLECTOR
3
2
BASE
PNP
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
65xx
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 5
xx = 15, 17, or 20
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
2N6515/D