2N6515 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Voltage Transistors

ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VCEO
VCBO
VEBO
Base Current
IB
Collector Current –
IC
Continuous
Total Device Dissipation
PD
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
PD
@ TC = 25°C
Derate above 25°C
Operating and Storage
Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
2N6515
250
250
2N6517
2N6520
350
350
6.0
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
625
mW
5.0
mW/°C
1.5
Watts
12
mW/°C
–55 to +150
°C
Symbol
R_qJA
R_qJC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N6515
2N6517, 2N6520
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
2N6515, 2N6517
2N6520
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
© Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 3
NPN
2N6515
2N6517
PNP
2N6520
Voltage and current are negative
for PNP transistors
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
NPN
1
EMITTER
COLLECTOR
3
2
BASE
PNP
1
EMITTER
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
250
–
350
–
V(BR)CBO
Vdc
250
–
350
–
V(BR)EBO
Vdc
6.0
–
5.0
–
Publication Order Number:
2N6515/D