2N6497 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,80W)

ON Semiconductor⁾
High Voltage NPN Silicon
Power Transistors
. . . designed for high voltage inverters, switching regulators and
line–operated amplifier applications. Especially well suited for
switching power supply applications.
• High Collector–Emitter Sustaining Voltage –
VCEO(sus) = 250 Vdc (Min)
• Excellent DC Current Gain
hFE = 10–75 @ IC = 2.5 Adc
• Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc –
VCE(sat) = 1.0 Vdc (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current – Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{– Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(1) Indicates JEDEC Registered Data.}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ,Tstg
Symbol
R_θJC
Value
250
350
6.0
5.0
10
2.0
80
0.64
–65 to +150
Max
1.56
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
2N6497
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLT
80 WATTS
4
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 11
Publication Order Number:
2N6497/D