2N6437 Datasheet, PDF (1/8 Pages) ON Semiconductor – POWER TRANSISTORS PNP SILICON

ON Semiconductort
High-Power PNP Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
• High Collector–Emitter Sustaining Voltage —
V_CEO(sus) = 100 Vdc (Min) — 2N6437
= 120 Vdc (Min) — 2N6438
• High DC Current Gain —
h_FE = 20–80 @I_C = 10 Adc
= 12 (Min) @ I_C = 25 Adc
• Low Collector–Emitter Saturation Voltage —
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
• Fast Switching Times @ I_C = 10 Adc
t_r = 0.3 µs (Max)
t_s = 1.0 µs (Max)
t_f = 0.25 µs (Max)
• Complement to NPN 2N6339 thru 2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Total Device Dissipation @ T}C ^{= 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(1) Indicates JEDEC Registered Data.}
Symbol
V_CB
V_CEO
V_EB
I_C
I_B
P_D
T_J,T_stg
2N6437 2N6438
120
140
100
120
6.0
25
50
10
200
1.14
–65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
R_θJC
Max
0.875
Unit
_C/W
2N6437
2N6438 ^*
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
PNP SILICON
100, 120 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 2
Publication Order Number:
2N6437/D