2N6426 Datasheet, PDF (1/8 Pages) ON Semiconductor – Darlington Transistors(NPN Silicon)

ON Semiconductort
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
40
12
500
625
5.0
1.5
12
–55 to +150
Symbol
Max
R_qJA
200
R_qJC
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
2N6426*
2N6427
*ON Semiconductor Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
COLLECTOR 3
BASE
2
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage ⁽¹⁾
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
—
—
1.0
mAdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
—
—
50
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
—
—
50
nAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev.1
Publication Order Number:
2N6426/D