2N6401 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off–State Voltage (Note 1.)
(T_J = *40 to 125°C, Sine Wave
50 to 60 Hz; Gate Open)
V_DRM,
V_RRM
Volts
2N6400
50
2N6401
100
2N6402
200
2N6403
400
2N6404
600
2N6405
800
On-State RMS Current
I_T(RMS)
16
A
(180° Conduction Angles; T_C = 100°C)
Average On-State Current
I_T(AV)
10
A
(180° Conduction Angles; T_C = 100°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 90°C)
Circuit Fusing (t = 8.3 ms)
I_TSM
I²t
160
A
145
A²s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, T_C = 100°C)
Forward Average Gate Power
(t = 8.3 ms, T_C = 100°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, T_C = 100°C)
Operating Junction Temperature Range
P_GM
20
Watts
P_G(AV)
0.5
Watts
I_GM
2.0
A
T_J
–40 to
°C
+125
Storage Temperature Range
T_stg
–40 to
°C
+150
*Indicates JEDEC Registered Data.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
A
K
1
2
3
1
2
3
4
MARKING
DIAGRAM
4
TO–220AB
CASE 221A
STYLE 3
YY WW
640x
x = 0, 1, 2, 3, 4 or 5
YY = Year
WW = Work Week
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
Package
Shipping
2N6400
TO220AB
500/Box
2N6401
TO220AB
500/Box
2N6402
TO220AB
500/Box
2N6403
TO220AB
500/Box
2N6404
TO220AB
500/Box
2N6405
TO220AB
500/Box
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
2N6400/D