2N6338G Datasheet, PDF (1/5 Pages) ON Semiconductor – High-Power NPN Silicon Transistors

2N6338, 2N6341
High-Power NPN Silicon
Transistors
. . . designed for use in industrial−military power amplifier and
switching circuit applications.
• High Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min) − 2N6338
= 150 Vdc (Min) − 2N6341
• High DC Current Gain −
h_FE = 30 − 120 @ I_C = 10 Adc
= 12 (Min) @ I_C = 25 Adc
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
• Fast Switching Times @ I_C = 10 Adc
t_r = 0.3 ms (Max)
t_s = 1.0 ms (Max)
t_f = 0.25 ms (Max)
• Pb−Free Packages are Available
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{@ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction
Temperature Range
Symbol
V_CB
V_CEO
V_EB
I_C
I_B
P_D
T_J, T_stg
2N6338 2N6341
120
180
100
150
6.0
25
50
10
200
1.14
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
θ_JC
0.875 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Stresses exceeding Maximum Ratings may damage the device. Maximum}
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Indicates JEDEC Registered Data.
http://onsemi.com
25 AMPERE
POWER TRANSISTORS
NPN SILICON
TO−204AA
CASE 1−07
ORDERING INFORMATION
Device
Package
Shipping
2N6338
2N6338G
TO−204AA
TO−204AA
(Pb−Free)
100 Units / Tray
100 Units / Tray
2N6341
TO−204AA 100 Units / Tray
2N6341G
TO−204AA
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 12
Publication Order Number:
2N6338/D