2N6338 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTOR(25A,200W)

ON Semiconductort
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
• High Collector–Emitter Sustaining Voltage –
V_CEO(sus) = 100 Vdc (Min) – 2N6338
= 150 Vdc (Min) – 2N6341
• High DC Current Gain –
h_FE = 30 – 120 @ I_C = 10 Adc
= 12 (Min) @ I_C = 25 Adc
• Low Collector–Emitter Saturation Voltage –
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
• Fast Switching Times @ I_C = 10 Adc
t_r = 0.3 ms (Max)
t_s = 1.0 ms (Max)
t_f = 0.25 ms (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Continuous
Peak
V_CB
V_CEO
V_EB
I_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
P_D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ T_C = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction TJ, Tstg}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction to Case}
2N6338
2N6341
120
180
100
150
6.0
25
50
10
200
1.14
–65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
_C
Symbol
θ_JC
Max
0.875
Unit
_C/W
*Indicates JEDEC Registered Data.
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 10
2N6338
2N6341*
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
Publication Order Number:
2N6338/D