2N6283 Datasheet, PDF (1/8 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

ON Semiconductort
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency
switching applications.
• High DC Current Gain @ I_C = 10 Adc –
h_FE = 2400 (Typ) – 2N6284
= 4000 (Typ) – 2N6287
• Collector–Emitter Sustaining Voltage –
V_CEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built–In Base–Emitter Shunt
Resistors
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current – Continuous}
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC =}
25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
Temperature Range
Symbo
l
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J,T_stg
2N6283
2N6286
2N6284
2N6287
80
100
80
100
5.0
20
40
0.5
160
0.915
–65 to +200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
R_θJC
1.09
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
NPN
2N6283
2N6284
PNP
2N6286
2N6287
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 1
Publication Order Number:
2N6284/D