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2N6107 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,40W)
ON Semiconductor)
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching
applications.
• DC Current Gain Specified to 7.0 Amperes
hFE = 30–150 @ IC
= 3.0 Adc — 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc — All Devices
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288
= 50 Vdc (Min) — 2N6109
= 70 Vdc (Min) — 2N6107, 2N6292
• High Current Gain — Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11
• TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N6111
2N6107
2N6288 2N6109 2N6292
30
50
70
40
60
80
5.0
7.0
10
3.0
40
0.32
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data.
Symbol
RθJC
Max
3.125
Unit
_C/W
PNP
2N6107
2N6109*
2N6111
NPN
2N6288
2N6292*
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30–50–70 VOLTS
40 WATTS
4
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 5
Publication Order Number:
2N6107/D