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2N6107 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,40W) | |||
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ON Semiconductor)
Complementary Silicon Plastic
Power Transistors
. . . designed for use in generalâpurpose amplifier and switching
applications.
⢠DC Current Gain Specified to 7.0 Amperes
hFE = 30â150 @ IC
= 3.0 Adc â 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc â All Devices
⢠CollectorâEmitter Sustaining Voltage â
VCEO(sus) = 30 Vdc (Min) â 2N6111, 2N6288
= 50 Vdc (Min) â 2N6109
= 70 Vdc (Min) â 2N6107, 2N6292
⢠High Current Gain â Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc â 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc â 2N6107, 09, 11
⢠TOâ220AB Compact Package
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Peak
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N6111
2N6107
2N6288 2N6109 2N6292
30
50
70
40
60
80
5.0
7.0
10
3.0
40
0.32
â65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Indicates JEDEC Registered Data.
Symbol
RθJC
Max
3.125
Unit
_C/W
PNP
2N6107
2N6109*
2N6111
NPN
2N6288
2N6292*
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30â50â70 VOLTS
40 WATTS
4
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221Aâ09
TOâ220AB
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 â Rev. 5
Publication Order Number:
2N6107/D
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